? silikron semiconductor c orporatio n 20 10 . 1 .10 version: 1.0 page 1 of 6 ssf 8 n60 features extremely high dv/dt capability low gate charge qg results in simple drive requirement 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatability description the ssf 8 n60 is a new generation of high voltage n C channel enhancement mode power mosfets and i s obtained through an extreme optimization layout design, in additional to pushing on - resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide su perior switching performance, withstand high energy p u l se in the a va lanc h e, and i ncreases packing density. application high current, high speed s witching ideal for off - line power supply, adaptor, pfc absolute maximum ratings parameter max. units id @ tc = 25 ? c continuous drain current,vgs@10v 8 .2 a id @ tc = 1 0 0 ? c continuous drain current,vgs@10v 5.5 idm pulsed drain current 32 .8 pd @ tc = 2 5 ? c power dissipation 145 w linear d erating factor 0.8 w / ? c vgs gate - to - source voltage 3 0 v eas single puls e avalanche energy 586 mj iar avalanche current 4 a ear repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt 4. 5 v/ns tj tstg operating junction and storage temperature range C 55 to +1 50 ? c thermal resis tance parameter min. typ. max. units rjc junction - to - case 0.86 ? c/w rcs case - to - sink,flat,greased surface 0.50 rja junction - to - ambient 62.5 vdss = 6 00v id = 8 a r dson = 0.85 ( ssf 8 n60 top view (to220)
? silikron semiconductor c orporatio n 20 10 . 1 .10 version: 1.0 page 2 of 6 ssf 8 n60 electrical characteristics @tj=25 ? c ( unless otherwise specified) parameter min. typ. max. u nits test conditions v(br)dss drain - to - source breakdown voltage 6 00 v vgs=0v,id=250a v(br)dss/ tj breakdown voltage temp.coefficient 0. 6 v / ? c reference to 2 5 ? c,id= 250a rds(on) static drain - to - source on - resistance 0. 85 1.1 vgs=10v,id= 3.8 a vgs(th) gate threshold voltage 2.0 4.0 v vds=vgs,id=250a gfs forward transconductance 6.4 s vds=40v,id= 3.8 a idss drain - to - source leakage current 1 u a vds= 6 00v,vgs=0v 1 0 vds=4 8 0 v , vgs = 0 v , tj = 1 5 0 ? c igss gate - to - source forward leakage 0.5 u a vgs= 3 0v gate - to - source reverse leakage - 0.5 vgs= - 3 0v qg total gate charge 2 8.5 15 nc id= 7.5 a vds=4 8 0v vgs=10v qgs gate - to - source charge 7 qgd gate - to - drain("miller") charge 14. 6 td(on) turn - on delay time 29 70 ns vdd= 30 0 v id= 7.5 a rg=25 tr rise time 78 160 td(off) turn - off delay time 65 130 tf fall time 6 0 128 ciss input capacitance 1000 1350 pf vgs=0v vds=25v f=1.0mhz coss output capacitance 125 165 crs s reverse transfer capacitance 16 21 source - drain ratings and characteristics parameter min. typ. max. units test conditions is continuous source current (body diode) 8 .2 a mosfet symbol showing the integral reverse p - n junction diode. ism p u lsed source current (body diode) 32 .8 vsd diode forward voltage 1. 3 v tj = 2 5 ? c,is= 7.2 a,vgs=0v t rr reverse recovery time 30 0 ns tj = 2 5 ? c,if= 7.2 a di/dt=100a/s qrr reverse recovery charge 1.8 u c notes: repetitive rating; pulse width limited by maximum. junction tem perature l = 23.5mh, ias =6.5a, vdd = 50v, rg = 25 ??starting , tj = 25c isd4a, di/dt200a/s, vddv(br)dss, tj25 c pulse width300s; duty cycle2%
? silikron semiconductor c orporatio n 20 10 . 1 .10 version: 1.0 page 3 of 6 ssf 8 n60 typical performance characteristics figure 1 on - region characteristics figure 2 transfer characteristics figure 3 on - resistance variati on vs. drain current and gate voltage characteristics figure 4 body diod e forward voltage variation vs. source current and temperature characteristics figure 5 capacitance characteristics figure 6 gate charge characteristics
? silikron semiconductor c orporatio n 20 10 . 1 .10 version: 1.0 page 4 of 6 ssf 8 n60 typical performance characteristics figure 7 breakdown voltage variation vs. temperature figure 8 on - resistance variation vs. temperature figure 9 maximum safe operation area figure 10 maximum drain current vs. case temperature figure 12 transient thermal response curve
? silikron semiconductor c orporatio n 20 10 . 1 .10 version: 1.0 page 5 of 6 ssf 8 n60 test circuit and waveform gate charge test circuit & waveform resistive switching te st circuit & waveform unclamped inductive switching test circuit & waveform
? silikron semiconductor c orporatio n 20 10 . 1 .10 version: 1.0 page 6 of 6 ssf 8 n60 t o - 22 0 mechanical data:
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